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Novel Fuse Scheme with a Short Repair Time to Maximize Good Chips per Wafer in Advanced SoCs

机译:新颖的保险丝方案,维修时间短,可最大限度地提高高级SoC中每个晶片的良品率

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摘要

Repairing embedded memories (e-memories) on an advanced system-on-chip (SoC) product is a key technique used to improve product yield. However, increasing the die area of SoC products equipped with various types of e-memories on the die is an issue. A fuse scheme can be used to resolve this issue. However, several fuse schemes that have been proposed to decrease the die area result in an increased repair time. Therefore, in this paper, we propose a novel fuse scheme that decreases both die area and repair time. Moreover, our approach is applied to a 65 nm SoC product. The results indicate that the proposed fuse scheme effectively decreases the die area and repair time of advanced SoC products.
机译:修复高级片上系统(SoC)产品上的嵌入式存储器(电子存储器)是用于提高产品良率的一项关键技术。但是,增加在芯片上配备各种电子存储器的SoC产品的芯片面积是一个问题。保险丝方案可用于解决此问题。但是,已经提出了几种减小管芯面积的熔断器方案,从而增加了维修时间。因此,在本文中,我们提出了一种新颖的熔断器方案,该方案可同时减少管芯面积和维修时间。此外,我们的方法适用于65 nm SoC产品。结果表明,所提出的熔断器方案有效地减少了先进SoC产品的管芯面积和维修时间。

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